International Reliability Physics Symposium (IRPS 2017)

April 2–6, 2017

Monterey ,CA USA

Call For Papers

IRPS is the preeminent conference for timely research on Reliability Physics of devices, materials, circuits, and products used in the electronics industry. IRPS is the venue where important reliability challenges and solutions are first discussed.

Topics of Interest

Circuits and Productsand Systems
• Circuit Reliability–Includes digital, mixed-signal, and RF applications; design for reliability
• Circuit Aging Simulation–Includes compact modeling; statistical methods
• Product IC Reliability–Includes burn-in; defect detection; on-chip sensors; modeling
• Consumer Electronics Reliability –Includes smart phones; wearable devices; tablets; health devices
• ReliabilityTesting –Includes reliability equipment, tools,and test methods
• Electronic System Reliability–Includes automotive, space, communications, medical, energy, and photovoltaic applications; screening techniques; system monitoring; failure root cause determination; modeling methodologies
• Soft Errors–Includes neutron and alpha particle SER; multi-bit SER/SEU; mitigation techniques; simulation
• ESD and Latchup–Includes component and system-level ESD design; modeling and simulation
• 3D Assembly–Includes multichip modules; 3D integration with TSV; thermomechanical stress; wafer thinning effects
• Packaging–Includes chip-package interaction; fatigue; power dissipation issues


Device, Process, and Materials
• Transistors –Includes hot carrier phenomena; bias-temperature instability; random telegraph noise; advanced transistor scaling challenges; Ge and III-V channels
• Gate Dielectrics –Includes TDDB modeling;reliability of novel gate dielectrics; modeling of progressive breakdown; gate dielectric reliability for III-V FETs
• Beyond CMOS Devices–Includes reliability of tunnel FETs, transistors with 2D semiconductor (graphene, MoS2), and spintronics
• Wide Band-Gap–Includes reliability of wide bandgap (GaN, SiC) power devices
• Back-End Reliability –Includes Electromigration; Joule heating; stress migration; low-k dielectric breakdown; middle of the lineprocesses
• Process Integration–Includes new process related reliability issues; foundry reliability challenges
• Failure Analysis–Includes evidence of new failure mechanisms; advances in failure analysis techniques
• Memory–Includes DRAM and NVM; failure mechanisms in novel memory devices including 3D Flash and ReRAM
• Photovoltaic Devices–Includes reliability of solar cell devices in silicon, CdTe, CIGS, etc.
• MEMS–Reliability of New Structures. Sensors. Actuators. Reliability Testing. Analysis & Modeling

IMPORTANT DATES

Submission deadline:October 15,2016.

Notification Due:December 16, 2016.

Final Version Due: January 6,2017

                       

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