In this paper we consider manufacturing a p-n-junctions by dopant diffusion or ion implantation into a multilayer structure. We introduce an approach to increase sharpness of these p-n-junctions and at the same time to increase homogeneity of distributions of dopants in enriched by these dopants areas. We consider influence of the above changing of distribution of dopant on charge carrier mobility. We also consider an approach to decrease value of mismatch-induced stress in the considered multilayer structure by using a buffer layer. The decreasing gives a possibility to increase value of charge carrier mobility.